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MITSUBISHI RF POWER MOS FET
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK (TOP)
Dimensions in mm
(BOTTOM)
FEATURES
* High power gain:Gpe8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm * High efficiency:55% typ. * Source case type seramic package (connected internally to source)
3
4.9
1
2
2.0 3.50 t=1.2MAX
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.
1 : DRAIN 2 : SOURCE 3 : GATE
MARKING
INDEX MARK TYPE No. LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted)
Symbol VDSS VGSS Pch Tj Tstg Parameter Drain to source voltage Gate to source voltage Channel dissipation Junction temperature Storage temperature Conditions Ratings 30 20 10 175 -40 to +110 Unit V V W C C
Tc=25C
(Note2)
Note1: Above parameters are guaranteed independently. 2: Solder source pad on Copper Block(14x2.8x2mm)
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted)
Symbol IDSS IGSS VTH Ciss Coss Pout hD Parameter Test conditions VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=7V, IDS=1mA VGS=10V, VDS=0V,f=1MHz VDS=10V, VGS=0V,f=1MHz VDS=9.6V, Pin=1W,f=450MHz Min Limits Typ Max 10 1 1.7 Unit A A V pF pF W %
Threshold voltage
1.0 45 80 8 55
7 50
Note: Above parameters,ratings,limits and conditions are subject to change.
Nov. 97
MITSUBISHI RF POWER MOS FET
2SK2975
TYPICAL PERFORMANCE DATA
IDS VS. VDS
5 TC=25C 5.0V 4.5V 3 4.0V 3.5V 3.0V 1.0 1 2.5V VGS=2.0V 0 0 1 2 3 4 5 6 7 8 9 10 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4.5 4.0 4 3.5 3.0 2.5 2.0 1.5 VDS=9.6V TC=25C
IDS VS. VGS
2
VDS(V)
VGS(V)
PO, add VS. Pin
40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 90 80 PO 70 60 add 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10
PO, add VS. VDD
100 90 80 PO 70 add 60 50 40 30 20 10 3 4 5 6 7 8 9 0 10 11 12 13
INPUT POWER Pin (dBm)
DRAIN SUPPLY VOLTAGE VDD(V)
EQUIVALENT CIRCUIT
46mm 12.5mm 1.5mm 12mm 22.5mm 16mm
C3 GR40-310 31pF C1 GR40-102 1000pF C2 GR40-10 10pF
R1 CR10-562 5600
R2 CR10-562 5600 C7 GR40-102 1000pF
C11 GR40-270 27pF
C12 GR40-130 13pF
L1 4Turns AWG#26,1.1 Enameled wire(mm)
C13 GR40-102 1000pF
C14 GR40-10 10pF
3mm
3mm
INPUT
VGG
C4 C5 C6 GR40-10 GR40-102 10pF 1000pF 10 F 50V
VDD
C8 C9 C10 GR40-10 GR40-102 10pF 1000pF 10 F 50V
OUTPUT
Note: Board material-glass epoxi substrate micri strip line width=2.8mm, r :4.8,t=1.6mm Nov. 97
MITSUBISHI RF POWER MOS FET
2SK2975
S-PARAMETER DATA(TYPICAL)
FREQ. (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.836 0.807 0.819 0.835 0.858 0.872 0.886 0.899 0.909 0.915 0.924 0.930 0.933 0.935 0.944 0.946 0.948 0.949 0.951 0.956 0.957 0.954 0.953 0.954 0.956 0.954 0.954 0.950 0.950 0.950 S11 -115.463 -141.825 -151.724 -156.464 -159.472 -161.678 -163.630 -165.272 -166.371 -167.628 -168.601 -169.541 -170.535 -171.602 -172.164 -173.164 -173.673 -174.773 -175.444 -175.951 -177.019 -177.922 -178.800 -179.511 179.625 178.904 177.726 176.753 175.847 174.793 0.021 0.021 0.020 0.018 0.016 0.014 0.012 0.010 0.010 0.010 0.010 0.011 0.013 0.015 0.017 0.019 0.021 0.024 0.026 0.028 0.031 0.033 0.035 0.038 0.040 0.042 0.045 0.046 0.049 0.051 S12 11.967 -16.870 -37.649 -50.731 -62.227 -72.477 -77.156 -82.951 -79.763 -77.947 -77.893 -76.571 -82.268 -88.668 -93.156 -103.513 -113.867 -124.065 -134.453 -144.025 -157.299 -169.332 179.717 167.673 155.999 144.195 132.079 119.508 107.540 95.929 19.136 10.141 6.556 4.625 3.475 2.709 2.175 1.788 1.501 1.279 1.107 0.969 0.855 0.759 0.690 0.625 0.570 0.525 0.487 0.446 0.411 0.386 0.368 0.337 0.323 0.303 0.287 0.270 0.260 0.244 S21 97.418 65.065 40.799 20.767 2.085 -14.865 -30.984 -46.429 -61.362 -75.599 -89.665 -103.303 -116.569 -130.173 -143.380 -156.123 -169.394 177.293 165.298 152.305 139.706 127.148 115.532 102.465 90.520 78.449 66.533 53.720 41.671 29.932 0.559 0.636 0.680 0.720 0.759 0.778 0.807 0.830 0.839 0.858 0.869 0.874 0.885 0.891 0.893 0.905 0.908 0.909 0.915 0.915 0.915 0.924 0.926 0.925 0.930 0.927 0.929 0.927 0.931 0.927
VD=9.6V,Pin=10dBm S22 -143.723 -154.490 -158.082 -159.659 -160.702 -161.884 -163.331 -164.014 -164.860 -165.663 -166.475 -166.923 -167.633 -168.317 -168.904 -169.826 -170.437 -171.046 -171.892 -172.318 -173.122 -174.349 -174.354 -174.989 -175.742 -176.300 -177.658 -178.157 -178.520 -179.724
Nov. 97

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